In this era, miniaturization advanced through scaling and ion implantation to create shallow junctions and high-density device layouts, enabling submicrometer metal-oxide-semiconductor field-effect transistors and compact memory chips. Reliability and radiation-hardening in complementary metal-oxide-semiconductor integrated circuits remained central concerns, with studies on latch-up mechanisms, process optimizations, and yield modeling for defect tolerance in large-scale integration. Metallization and metal–semiconductor interface issues underpinned scalable silicon integrated circuits, while efforts in integrated optoelectronics and photonic elements progressed toward monolithic electronic–optical integration. Early memory technologies such as charge-coupled devices and electronically alterable RAM demonstrated embedded nonvolatile and rewritable memory concepts within IC fabrication. Historical Significance: The period established the blueprint for modern very large scale integration and memory-centric IC design. Ion-implanted metal-oxide-semiconductor field-effect transistors with shallow junctions demonstrated the viability of aggressive MOS scaling and faster digital ICs, laying a foundation for future device technology. Area-time complexity for very-large-scale integration proposed fundamental limits shaping design optimization and computer-aided design methodologies. Heterostructure bipolar transistors and integrated circuits introduced energy-gap engineering via heterostructures to boost speed and integration, catalyzing the high-performance IC revolution. Wafer bonding for silicon-on-insulator technologies enabled isolation, reduced parasitics, and spurred subsequent SOI adoption. Equivalents of circuit models for three-dimensional multiconductor systems provided scalable frameworks for accurate interconnect analysis and design in complex ICs.